BUK7Y35-55B,115 NXP Semiconductors, BUK7Y35-55B,115 Datasheet - Page 4

• Manufacturer Part Number: BUK7Y35-55B,115
• Description: MOSFET N-CH 55V 28.43A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y35-55B,115

• Input Capacitance (ciss) @ Vds: 781pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28.43A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 13.1nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5520-2

NXP Semiconductors
BUK7Y35-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
30
20
10
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
100
(A)
I
AL
10
10
10
10
-1
-2
150
2
1
10
-3
All information provided in this document is subject to legal disclaimers.
T
003aac520
mb
(°C)
200
10
Rev. 04 — 7 April 2010
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
N-channel TrenchMOS standard level FET
AL
003aac499
(1)
(2)
(3)
(ms)
10
50
BUK7Y35-55B
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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