BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 11

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 19. Source current as a function of source-drain voltage; typical values
Fig 20. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
(A)
I
S
200
150
100
50
(pF)
0
C
0
10
10
10
All information provided in this document is subject to legal disclaimers.
4
3
2
10
-1
Rev. 02 — 13 December 2010
T
0.5
j
= 175 °C
1
1
T
j
= 25 °C
1.5
10
003aae416
V
SD
V
(V)
DS
003aae412
(V)
2
C
C
C
iss
oss
rss
10
2
BUK6510-75C
N-channel TrenchMOS FET
© NXP B.V. 2010. All rights reserved.
11 of 16