BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 7.
Fig 9.
V
(S)
g
GS(th)
(V)
120
100
fs
80
60
40
20
0
4
3
2
1
0
-60
drain current; typical values
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
0
20
0
40
max
min
typ
60
60
120
80
All information provided in this document is subject to legal disclaimers.
003aad805
003aae411
T
I
j
D
(°C)
(A)
Rev. 02 — 13 December 2010
100
180
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(A)
D
I
10
D
10
10
10
10
10
120
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
0
0
1
1
min
2
T
j
BUK6510-75C
= 175 °C
N-channel TrenchMOS FET
2
typ
3
max
3
T
© NXP B.V. 2010. All rights reserved.
j
4
= 25 °C
003aae410
003aad806
V
V
GS
GS
(V)
(V)
4
5
8 of 16