BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
V
(mΩ)
R
GS (th)
(V)
DSon
30
25
20
15
10
3
2
1
0
5
0
-60
junction temperature
of drain current; typical values
0
25
0
V
GS
(V) = 3.8
50
max
min
typ
60
75
4.0
120
100
All information provided in this document is subject to legal disclaimers.
003aae413
003a a c337
T
j
I
(°C)
D
(A)
4.5
5.0
6.0
Rev. 02 — 13 December 2010
10
180
125
Fig 12. Sub-threshold drain current as a function of
Fig 14. Drain-source on-state resistance as a function
R
(m Ω )
10
10
10
10
10
10
(A)
I
DSon
D
-1
-2
-3
-4
-5
-6
40
30
20
10
0
gate-source voltage
of drain current; typical values
0
0
3.0
min
20
1
3.2
BUK6510-75C
N-channel TrenchMOS FET
3.4
40
typ
2
V
GS
(V) = 3.5
© NXP B.V. 2010. All rights reserved.
V
10.0
3.8
4.0
4.5
GS
3.6
I
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D
003aaf017
max
(A)
(V)
60
3
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