BUK625R0-40C,118 NXP Semiconductors, BUK625R0-40C,118 Datasheet - Page 3

• Manufacturer Part Number: BUK625R0-40C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK625R0-40C,118

• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
BUK625R0-40C
Product data sheet
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
GS
tot
DS(AL)S
DS(AL)R
-16V accumulated duration not to exceed 168 hrs.
Accumulated pulse duration not to exceed 5mins.
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 September 2010
Conditions
T
DC
Pulsed
T
T
T
see
T
T
t
I
V
p
D
j
mb
mb
mb
mb
mb
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 90 A; V
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 10 V; T
sup
j
≤ 175 °C
j(init)
p
GS
≤ 40 V; R
≤ 10 µs; pulsed;
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
N-channel TrenchMOS intermediate level FET
mb
= 25 °C
GS
= 50 Ω;
Figure 1
Figure 1
BUK625R0-40C
[1]
[2]
[3]
[3]
[4][5][6]
Min
-
-16
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
175
Max
40
16
20
90
87
490
158
90
490
200
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
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