BUK625R0-40C,118 NXP Semiconductors, BUK625R0-40C,118 Datasheet - Page 5

MOSFET N-CH TRENCH DPAK

BUK625R0-40C,118

Manufacturer Part Number
BUK625R0-40C,118
Description
MOSFET N-CH TRENCH DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK625R0-40C,118

Input Capacitance (ciss) @ Vds
5200pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
88nC @ 10V
Power - Max
158W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
158 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK625R0-40C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 1 — 17 September 2010
Conditions
see
Figure 4
10
-3
N-channel TrenchMOS intermediate level FET
10
-2
BUK625R0-40C
Min
-
10
P
-1
t
Typ
-
p
T
tp (s)
© NXP B.V. 2010. All rights reserved.
003aad070
δ =
Max
0.95
T
t
p
t
1
Unit
K/W
5 of 14

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