PSMN035-100LS,115 NXP Semiconductors, PSMN035-100LS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN035-100LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS,115

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5585-2

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 7.
Fig 9.
(pF)
C
(A)
I
D
2000
1500
1000
500
30
20
10
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
0.5
2
10
1
4
6
V
5
GS
1.5
6
C
(V) = 4.5
C
All information provided in this document is subject to legal disclaimers.
003a a e 359
003a a e 355
rss
V
V
iss
GS
DS
4.7
(V)
(V)
Rev. 2 — 18 August 2010
8
2
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS(th)
(V)
100
80
60
40
20
5
4
3
2
1
0
0
-60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
PSMN035-100LS
max
min
typ
10
60
120
15
© NXP B.V. 2010. All rights reserved.
003a a e 360
V
T
003aae486
GS
j
(°C)
(V)
180
20
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