PSMN035-100LS,115 NXP Semiconductors, PSMN035-100LS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN035-100LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS,115

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5585-2

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
gate-source voltage
of drain current; typical values
0
0
V
GS
10
2
(V) = 4.5
min
typ
20
4
max
V
I
All information provided in this document is subject to legal disclaimers.
4.7
GS
D
003aae358
(A)
003aae487
(V)
10
5
6
30
Rev. 2 — 18 August 2010
6
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
3.2
2.4
1.6
0.8
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
PSMN035-100LS
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aae372
003aaa508
T
j
(°C)
180
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