PSMN035-100LS,115 NXP Semiconductors, PSMN035-100LS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN035-100LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS,115

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5585-2

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
10
= 20 V
20
(A)
I
S
30
20
10
80 V
50 V
0
Q
0
All information provided in this document is subject to legal disclaimers.
003a a e 361
G
(nC)
30
Rev. 2 — 18 August 2010
T
0.3
j
= 150 °C
N-channel QFN3333 100 V 32mΩ standard level MOSFET
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
0.9
4
3
2
10
as a function of drain-source voltage; typical
values
T
−1
003a a e 363
j
V
= 25 °C
SD
(V)
1.2
PSMN035-100LS
1
10
V
© NXP B.V. 2010. All rights reserved.
003a a e 362
DS
(V)
C
C
C
oss
rss
iss
10
2
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