BUK663R5-30C,118 NXP Semiconductors, BUK663R5-30C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK663R5-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R5-30C,118

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK663R5-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(A)
DSon
I
D
80
60
40
20
15
12
0
9
6
3
0
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
4
T
j
2
= 175 °C
…continued
8
3
T
12
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
4
003aae307
003aae312
V
V
GS
GS
(V)
(V)
Rev. 02 — 16 November 2010
16
Conditions
I
see
I
V
5
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
(A)
(S)
g
I
D
125
100
fs
100
75
50
25
N-channel TrenchMOS intermediate level FET
80
60
40
20
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
j
0
0
= 25 °C;
10
6
5
0.5
25
4.5
BUK663R5-30C
Min
-
-
-
50
1
Typ
0.8
46
57
1.5
75
V
GS
© NXP B.V. 2010. All rights reserved.
003aae308
003aae306
(V) = 3.2
V
I
D
DS
Max
1.2
-
-
(A)
(V)
3.4
3.3
4.0
3.6
3.8
100
2
Unit
V
ns
nC
7 of 14