AUIRLR3410TRL International Rectifier, AUIRLR3410TRL Datasheet - Page 4

• Manufacturer Part Number: AUIRLR3410TRL
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3410TRL

• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AUIRLR3410
4
100
0.1
100
10
0.1
10
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1
2
0.1
TOP
BOTTOM 2.5V
3
V
V
GS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
DS
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
1
5
T = 175°C
J
6
2.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 50V
10
8
9
100
10
A
A
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
TOP
BOTTOM 2.5V
I
D
= 15A
V
T , Junction Temperature (°C)
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
60
2.5V
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
J
10
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V
GS
= 10V
100
A
A