AUIRLR3410TRL International Rectifier, AUIRLR3410TRL Datasheet - Page 5

• Manufacturer Part Number: AUIRLR3410TRL
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3410TRL

• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
1400
1200
1000
800
600
400
200
10
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
V
Drain-to-Source Voltage
V
oss
iss
rss
SD
0.6
DS
Forward Voltage
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 175°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
J
gd
gd
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
1.4
100
A
A
1000
100
10
15
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
1
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
I
C
J
D
= 9.0A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
20
AUIRLR3410
BY R
= 80V
= 50V
= 20V
DS(on)
FOR TEST CIRCUIT
30
SEE FIGURE 13
100
10µs
100µs
1ms
10ms
40
5
1000
50
A
A