AUIRLR3410TRL International Rectifier, AUIRLR3410TRL Datasheet - Page 7

• Manufacturer Part Number: AUIRLR3410TRL
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3410TRL

• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
10V
V DS
Q
GS
t p
I AS
D.U.T
t p
0.01 Ω
L
Q
Charge
Q
GD
G
15V
V
(BR)DSS
DRIVER
+
-
V DD
A
350
300
250
200
150
100
50
0
12V
Fig 12c. Maximum Avalanche Energy
25
Fig 13b. Gate Charge Test Circuit
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
Current Regulator
= 25V
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
AUIRLR3410
I
G
100
D.U.T.
125
I
D
TOP
BOTTOM
+
-
150
V
DS
6.4A
3.7A
9.0A
I
D
7
175
A