AUIRLR2905TRL International Rectifier, AUIRLR2905TRL Datasheet

AUIRLR2905TRL

Manufacturer Part Number

AUIRLR2905TRL

Description

MOSFET N-CH 55V 42A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRLR2905TRL.pdf (12 pages)

Specifications of AUIRLR2905TRL

Input Capacitance (ciss) @ Vds

1700pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

27 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

42A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

48nC @ 5V

Power - Max

110W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

• Advanced Planar Technology

• Logic-Level Gate Drive

• Low On-Resistance

• Dynamic dV/dT Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified

www.irf.com

HEXFET

*Qualification standards can be found at http://www.irf.com/

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

@ 10V

Gate

HEXFET Power MOSFET

(BR)DSS

DS(on)

Typ.

AUIRLR2905

–––

Drain

D-Pak

-55 to + 175

max.

Max.

0.71

300

160

110

± 16

210

5.0

Max.

110

1.4

PD - 97623

Source

27mΩ

55V

42A

01/17/2011

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRLR2905TRL

AUIRLR2905TRL Summary of contents

Page 1

... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance h R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com Gate Parameter @ 10V GS @ 10V ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 5

1MHz iss 2400 rss oss iss 2000 1600 C oss 1200 800 ...

Page 6

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE ...

Page 7

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent 8 + • • ƒ • - „ • • • • P.W. Period ...

Page 9

D-Pak Part Marking Information www.irf.com 9 ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

... Ordering Information Base part Package Type number AUIRLR2905 Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR 11 ...

Page 12

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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