AUIRLR2905TRL International Rectifier, AUIRLR2905TRL Datasheet - Page 5

• Manufacturer Part Number: AUIRLR2905TRL
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR2905TRL

• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
2800
2400
2000
1600
1200
10
800
400
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
C
C
C
V
T = 175°C
iss
rss
V
J
oss
SD
0.8
DS
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
= 0V,
= C
= C
= C
J
1.2
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
1.6
, C
ds
SHORTED
2.0
V
GS
= 0V
2.4
100
A
A
1000
100
15
12
10
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= 25A
= 25°C
= 175°C
10
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
V
V
DS
DS
BY R
30
= 44V
= 28V
10
DS(on)
40
FOR TEST CIRCUIT
SEE FIGURE 13
50
60
10µs
100µs
1ms
10ms
5
100
70
A
A