AUIRLR2905TRL International Rectifier, AUIRLR2905TRL Datasheet - Page 2

• Manufacturer Part Number: AUIRLR2905TRL
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR2905TRL

• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Notes:
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
V
R
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
I
2
(BR)DSS
SD
DD
J
G
≤ 175°C
= 25Ω, I
≤ 25A, di/dt ≤ 270A/µs, V
= 25V, starting T
/∆T
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25A. (See Figure 12)
Parameter
J
= 25°C, L =470µH
Parameter
Parameter
DD
™
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
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1.0
55
21
…
†
When mounted on 1" square PCB (FR-4 or G-10
R
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
θ
0.070
1700
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400
150
–––
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210
7.5
4.5
is measured at Tj approximately 90°C.
11
84
26
15
80
0.027
0.030
0.040
-100
–––
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250
100
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160
120
320
2.0
8.6
1.3
25
48
25
42
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 3.4Ω
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V
= 28V
= 5.0V, R
= 0V
GS
, I
Conditions
D
Conditions
Conditions
f
D
S
F
D
D
= 250µA
D
D
GS
GS
= 250µA
= 25A
= 25A, V
= 25A
= 25A
D
= 25A
= 21A
= 1.1Ω
= 0V
= 0V, T
f
www.irf.com
D
f
f
f
G
= 1mA
GS
f
J
= 150°C
G
= 0V
S
+L
D
D
S
)
f
S
D