AUIRF7675M2TR1 International Rectifier, AUIRF7675M2TR1 Datasheet

AUIRF7675M2TR1

Manufacturer Part Number

AUIRF7675M2TR1

Description

MOSFET N-CH 150V 90A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF7675M2TR.pdf (11 pages)

Specifications of AUIRF7675M2TR1

Input Capacitance (ciss) @ Vds

1360pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

56 mOhm @ 11A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

90A

Vgs(th) (max) @ Id

5V @ 100µA

Gate Charge (qg) @ Vgs

32nC @ 10V

Power - Max

2.7W

Mounting Type

Package / Case

Continuous Drain Current Id

4.4A

Drain Source Voltage Vds

150V

On Resistance Rds(on)

0.047ohm

Rds(on) Test Voltage Vgs

10V

Transistor Case Style

DirectFET M2

No. Of Pins

Svhc

No SVHC

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-

ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D

audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic

inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the

voltage ringing that accompanies current transients.

These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

HEXFET

Applicable DirectFET Outline and Substrate Outline

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJ-Can

θJ-PCB

@ T

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Ã™

Parameter

AUTOMOTIVE GRADE

™

@ 10V

@ 10V (Package Limited)

(Silicon Limited)

DirectFET™ Power MOSFET ‚

Typ.

AUIRF7675M2TR1

12.5

–––

1.4

See Fig.18a, 18b, 15, 16

(BR)DSS

DS(on)

G (typical)

g (typical)

AUIRF7675M2TR

-55 to + 175

Max.

150

± 20

170

270

4.4

2.7

0.3

typ.

max.

Max.

–––

3.3

DirectFET™ ISOMETRIC

47m

56m

21nC

150V

1.2

Units

°C/W

W/°C

°C

8/16/10

Related parts for AUIRF7675M2TR1

AUIRF7675M2TR1 Summary of contents

Page 1

... AUTOMOTIVE GRADE Ω Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited ™ Parameter AUIRF7675M2TR AUIRF7675M2TR1 DirectFET™ Power MOSFET ‚ V 150V (BR)DSS R typ. 47m DS(on) max. 56m R 1.2 G (typical) Q 21nC g (typical DirectFET™ ISOMETRIC Max. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This product has passed an Automotive qualification. IR’s Industrial and Consumer qualification level is granted by ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.5V 10 6.0V 5.5V BOTTOM 5.0V 1 5.0V ≤ 60μs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 140 120 100 80 ...

Page 5

100μ 250μ 1.0mA 1.0A 2.5 1.5 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100 100μsec 10 1msec 25°C 10msec Tj = 175°C Single Pulse DC 0.1 0 100 Drain-toSource Voltage (V) Fig 13. Maximum Safe ...

Page 7

TOP Single Pulse BOTTOM 1% Duty Cycle 11A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy Vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE D D www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com CODE "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date ...

Page 10

... Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7675M2TR). For 1000 parts on 7" reel, order AUIRF7675M2TR1 CODE NOTE: CONTROLLING DIMENSIONS IN MM Click on this section to link to the appropriate technical paper. ‚ ...

Page 11

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ex- ...

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