AUIRF7675M2TR1 International Rectifier, AUIRF7675M2TR1 Datasheet - Page 7

• Manufacturer Part Number: AUIRF7675M2TR1
• Description: MOSFET N-CH 150V 90A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7675M2TR1

• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Power - Max: 2.7W
• Mounting Type: *
• Package / Case: *
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: DirectFET M2
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 17. Maximum Avalanche Energy Vs. Temperature
www.irf.com
0
Fig 18a. Unclamped Inductive Test Circuit
60
50
40
30
20
10
0
Fig 19a. Gate Charge Test Circuit
25
Fig 20a. Switching Time Test Circuit
Starting T J , Junction Temperature (°C)
R G
20K
20V
V
V DS
1K
50
GS
t p
I AS
TOP
BOTTOM 1% Duty Cycle
I D = 11A
75
D.U.T
≤ 0.1 %
≤ 1
0.01 Ω
L
S
100
DUT
Single Pulse
15V
125
L
DRIVER
+
- V DD
150
+
-
A
VCC
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ΔT
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 18a, 18b.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
av
av =
Fig 18b. Unclamped Inductive Waveforms
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
Id
(assumed as 25°C in Figure 16, 17).
Fig 19b. Gate Charge Waveform
= Average power dissipation per single
I
Fig 20b. Switching Time Waveforms
Vgs
AS
av
P
) = Transient thermal resistance, see figure 11)
V
90%
10%
V
D (ave)
DS
GS
= 1/2 ( 1.3·BV·I
I
E
av
t
d(on)
AS (AR)
= 2DT/ [1.3·BV·Z
Qgodr
t p
t
r
= P
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
V
Qgd
th
av
(BR)DSS
]
t
d(off)
thJC
Qgs2
t
Vgs(th)
f
Vds
Qgs1
jmax
is
7