STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 13

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

STB120N4LF6, STD120N4LF6
Figure 21. DPAK (TO-252) drawing
Figure 22. DPAK footprint
b. All dimension are in millimeters
6.7
(b)
Doc ID 16919 Rev 2
6.7
1.8
3
1.6
1.6
Package mechanical data
2.3
2.3
0068772_G
AM08850v1
13/18