STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 14

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

Packaging mechanical data
5
14/18
Packaging mechanical data
Table 11.
Dim.
A0
B0
D1
K0
P0
P1
P2
W
D
R
E
F
T
D²PAK (TO-263) tape and reel mechanical data
Min.
10.5
15.7
1.59
1.65
11.4
11.9
0.25
23.7
1.5
4.8
3.9
1.9
50
Tape
mm
Doc ID 16919 Rev 2
Max.
10.7
15.9
1.61
1.85
11.6
12.1
0.35
24.3
1.6
5.0
4.1
2.1
Dim.
G
A
B
C
D
N
T
Base qty
Bulk qty
STB120N4LF6, STD120N4LF6
Min.
12.8
20.2
24.4
100
1.5
Reel
mm
Max.
1000
1000
13.2
26.4
30.4
330