STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 6

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
BV
I
D
1
250
200
150
100
300
350
0.85
(norm)
1.00
0.95
0.90
1.05
0.1
(A)
50
DSS
I
D
0
0
-75
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
-25
0.5
1
I
D
25
=1mA
1.0
V
VDSS
GS
75
10
=10V
vs temperature
Tj=175°C
Tc=25°C
Single pulse
1.5
125
V
3V
DS
4V
V
175
(V)
DS
Doc ID 16919 Rev 2
10ms
100µs
1ms
AM08964v1
AM08965v1
AM08967v1
(V)
5V
T
J
(°C)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
200
100
300
(mΩ)
(A)
I
3.5
3.0
2.5
2.0
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
1
20
STB120N4LF6, STD120N4LF6
V
GS
2
=10V
40
V
DS
3
=2V
60
4
80
V
GS
AM08968v1
(V)
AM08966v1
I
D
(A)