PC28F00AP33TFA NUMONYX, PC28F00AP33TFA Datasheet - Page 5

• Manufacturer Part Number: PC28F00AP33TFA
• Description: IC FLASH 1GBIT P33 65NM 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of PC28F00AP33TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1G (64M x 16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 904253; 904253; PC28F00AP33TF 904253

P33-65nm
1.0
1.1
1.2
Datasheet
7
Functional Description
Introduction
This document provides information about the Numonyx
memory and describes its features, operations, and specifications.
P33-65nm is the latest generation of Numonyx
embedded flash market segment, offered in 64-Mbit up through 2-Gbit. This document
covers specifically 512-Mbit, 1-Gbit, 2-Gbit product information. Benefits include more
density in less space, high-speed interface NOR device on TSOP package, and support
for code and data storage. Features include high-performance synchronous-burst read
mode, dramatical improvement in buffer program time through larger buffer size, fast
asynchronous access times, low power, flexible security options, and two industry-
standard package choices.
P33-65nm is manufactured using Numonyx
Overview
The P33-65nm device provides high performance on a 16-bit data bus. Individually
erasable memory blocks are sized for optimum code and data storage. Upon initial
power-up or return from reset, the device defaults to asynchronous page-mode read.
Configuring the RCR(Read Configuration Register) enables synchronous burst-mode
reads. In synchronous burst mode, output data is synchronized with a user-supplied
clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast buffer program and erase operations. The device features
a 512-word buffer to enable optimum programming performance, which can improve
system programming throughput time significantly to 1.46MByte/s.
Designed for low-voltage systems, P33-65nm device supports read operations with VCC
at 3.0V, and erase and program operations with VPP at 3.0V or 9.0V. Buffered
Enhanced Factory Programming provides the fastest flash array programming
performance with VPP at 9.0V, which increases factory throughput. With VPP at 3.0V,
VCC and VPP can be tied together for a simple, ultra low power design. In addition to
voltage flexibility, a dedicated VPP connection provides complete data protection when
VPP ≤ V
The Command User Interface is the interface between the system processor and all
internal operations of the device. An internal Write State Machine automatically
executes the algorithms and timings necessary for block erase and program. A Status
Register indicates erase or program completion and any errors that may have occurred.
A device command sequence invokes program and erase automation. Each erase
operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations.
The P33-65nm OTP Register allows unique flash device identification that can be used
to increase system security. The individual Block Lock feature provides zero-latency
block locking and unlocking. The P33-65nm device adds enhanced protection via
Password Access; this new feature allows write and/or read access protection of user-
defined blocks. In addition, the P33-65nm device also has backward compatible One-
Time Programmable (OTP) permanent block locking security feature.
PPLK
.
®
65nm process technology.
®
Axcell
TM
®
P33 Flash memory to the
Axcell
TM
Order Number:208043-05
P33-65nm Flash
Apr 2010