LM5106MM National Semiconductor, LM5106MM Datasheet - Page 9

• Manufacturer Part Number: LM5106MM
• Description: DRIVER, MOSFET, HALF BRIDGE, SMD
• Manufacturer: National Semiconductor

Specifications of LM5106MM

• Device Type: Half Bridge
• Module Configuration: Half Bridge
• Peak Output Current: 1.8A
• Input Delay: 115ns
• Output Delay: 32ns
• Supply Voltage Range: 8V To 14V
• Driver Case Style: MSOP
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.
2.
HS must always be at a lower potential than HO. Pulling
HO more than -0.3V below HS can activate parasitic
transistors resulting in excessive current flow from the
HB supply, possibly resulting in damage to the IC. The
same relationship is true with LO and VSS. If necessary,
a Schottky diode can be placed externally between HO
and HS or LO and GND to protect the IC from this type
of transient. The diode must be placed as close to the IC
pins as possible in order to be effective.
HB to HS operating voltage should be 15V or less.
Hence, if the HS pin transient voltage is -5V, VDD should
be ideally limited to 10V to keep HB to HS below 15V.
FIGURE 6. LM5106 Driving MOSFETs Connected in Half-Bridge Configuration
9
3.
Low ESR bypass capacitors from HB to HS and from
VCC to VSS are essential for proper operation. The
capacitor should be located at the leads of the IC to
minimize series inductance. The peak currents from LO
and HO can be quite large. Any inductances in series with
the bypass capacitor will cause voltage ringing at the
leads of the IC which must be avoided for reliable
operation.
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