GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 13

18M SYNCH BURST SRAM 512KX32, SMD

GS816032BGT-200

Manufacturer Part Number
GS816032BGT-200
Description
18M SYNCH BURST SRAM 512KX32, SMD
Manufacturer
GSI TECHNOLOGY
Datasheet

Specifications of GS816032BGT-200

Memory Size
18Mbit
Clock Frequency
200MHz
Access Time
6.5ns
Supply Voltage Range
2.3V To 2.7V, 3V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
0°C To +70°C
Memory Configuration
512K X 32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
V
V
Recommended Operating Temperatures
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
Notes:
1.
2.
3.
Notes:
1.
2.
Ambient Temperature (Commercial Range Versions)
DDQ3
DDQ2
Ambient Temperature (Industrial Range Versions)
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
V
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
V
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
IHQ
IHQ
Range Logic Levels
Range Logic Levels
(max) is voltage on V
(max) is voltage on V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
V
V
V
V
DD
DD
DD
DD
I/O Input High Voltage
I/O Input High Voltage
I/O Input Low Voltage
I/O Input Low Voltage
Input High Voltage
Input High Voltage
Input Low Voltage
Input Low Voltage
Parameter
Parameter
Parameter
DDQ
DDQ
pins plus 0.3 V.
pins plus 0.3 V.
Symbol
Symbol
Symbol
DDn
DDn
DDn
V
V
V
V
V
V
V
V
T
T
IHQ
IHQ
13/24
ILQ
ILQ
IH
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
IH
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
IL
IL
A
A
0.6*V
0.6*V
Min.
Min.
Min.
–0.3
–0.3
–0.3
–0.3
–40
2.0
2.0
0
DD
DD
Typ.
Typ.
Typ.
25
25
GS816018/32/36BT-250/200/150
V
V
V
V
DDQ
0.3*V
DDQ
0.3*V
DD
DD
Max.
Max.
Max.
0.8
0.8
70
85
+ 0.3
+ 0.3
+ 0.3
+ 0.3
DD
DD
Unit
Unit
Unit
°C
°C
V
V
V
V
V
V
V
V
© 2004, GSI Technology
Notes
Notes
Notes
1,3
1,3
1,3
1,3
1
1
1
1
2
2

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