GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 14

• Manufacturer Part Number: GS816032BGT-200
• Description: 18M SYNCH BURST SRAM 512KX32, SMD
• Manufacturer: GSI TECHNOLOGY

Specifications of GS816032BGT-200

• Memory Size: 18Mbit
• Clock Frequency: 200MHz
• Access Time: 6.5ns
• Supply Voltage Range: 2.3V To 2.7V, 3V To 3.6V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Operating Temperature Range: 0°C To +70°C
• Memory Configuration: 512K X 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
(T
Note:
These parameters are sample tested.
AC Test Conditions
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
V
A
SS
Undershoot Measurement and Timing
= 25
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
– 2.0 V
Input/Output Capacitance
50%
V
V
Output reference level
SS
Input reference level
IH
o
Input Capacitance
C, f = 1 MH
Input high level
Input slew rate
Input low level
Parameter
Parameter
Output load
Z
, V
50% tKC
DD
= 2.5 V)
Symbol
DQ
C
C
Conditions
I/O
IN
V
DD
V
1 V/ns
V
Fig. 1
0.2 V
DDQ
DD
– 0.2 V
/2
/2
* Distributed Test Jig Capacitance
Output Load 1
14/24
Test conditions
V
V
V
DDQ/2
OUT
IN
= 0 V
= 0 V
50Ω
V
DD
+1.5 V
Overshoot Measurement and Timing
50%
V
V
DD
IL
30pF
*
Typ.
4
6
GS816018/32/36BT-250/200/150
50% tKC
Max.
5
7
Unit
© 2004, GSI Technology
pF
pF