BUK663R5-55C NXP Semiconductors, BUK663R5-55C Datasheet - Page 7

• Manufacturer Part Number: BUK663R5-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.86mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK663R5-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
g
(S)
(A)
I
fs
150
120
D
90
60
30
80
60
40
20
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
1
20
…continued
T
T
2
j
= 175 °C
j
= 25 °C
30
3
Conditions
I
see
I
V
40
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aae388
003aae390
= 25 A; V
= 20 A; dI
GS
I
D
Figure 17
= 25 V
(A)
(V)
Rev. 2 — 23 December 2010
50
4
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 7.
Fig 9.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
100
D
N-channel TrenchMOS intermediate level FET
16
12
80
60
40
20
8
4
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
10
8.0
6.0
0.2
4
BUK663R5-55C
0.4
5.0
Min
-
-
-
4.5
8
0.6
Typ
0.85
65
148
12
© NXP B.V. 2010. All rights reserved.
V
0.8
GS
V
003aae389
003aae391
GS
V
(V) =
DS
Max
1.2
-
-
(V)
3.4
3.3
3.8
3.6
4.0
(V)
16
1
Unit
V
ns
nC
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