BUK663R5-55C NXP Semiconductors, BUK663R5-55C Datasheet - Page 9

• Manufacturer Part Number: BUK663R5-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.86mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK663R5-55C
Product data sheet
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
5
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae394
C
C
(V)
C
oss
rss
iss
Rev. 2 — 23 December 2010
10
2
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of
(A)
V
I
(V)
S
100
GS
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
0.3
50
V
DS
T
= 14 V
j
= 175 °C
BUK663R5-55C
100
0.6
150
0.9
T
j
© NXP B.V. 2010. All rights reserved.
V
= 25 °C
Q
DS
V
003aae393
003aae397
G
SD
= 40 V
(nC)
(V)
200
1.2
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