PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet - Page 5

• Manufacturer Part Number: PSMN3R4-30PL
• Description: MOSFET,N CH,30V,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R4-30PL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.05
0.2
0.1
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 01 — 2 November 2010
Conditions
see
10
-3
Figure 4
N-channel 30 V 3.4 mΩ logic level MOSFET
10
-2
PSMN3R4-30PL
Min
-
10
P
-1
t
Typ
0.65
p
T
t
© NXP B.V. 2010. All rights reserved.
p
(s)
003aad007
δ =
Max
1
T
t
p
t
1
Unit
K/W
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