PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet - Page 7

• Manufacturer Part Number: PSMN3R4-30PL
• Description: MOSFET,N CH,30V,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN3R4-30PL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
Measured 3 mm from package.
(A)
120
I
D
90
60
30
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
10
Characteristics
4.5
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
3.5
1
…continued
2
V
3
GS
All information provided in this document is subject to legal disclaimers.
003aad413
V
(V) = 3
DS
2.8
2.4
2.6
(V)
Rev. 01 — 2 November 2010
V
4
Conditions
V
I
see
I
V
S
S
DS
GS
GS
= 10 A; V
= 25 A; dI
Figure 17
= 12 V; R
= 4.5 V; R
= 0 V; V
GS
S
DS
Fig 6.
/dt = -100 A/µs;
L
G(ext)
= 0 V; T
= 0.5 Ω;
= 12 V
(pF)
7000
6000
5000
4000
3000
2000
1000
C
= 4.7 Ω
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
N-channel 30 V 3.4 mΩ logic level MOSFET
j
= 25 °C;
3
PSMN3R4-30PL
Min
-
-
-
-
-
-
-
6
Typ
40
73
59
28
0.7
36
28
9
© NXP B.V. 2010. All rights reserved.
V
003aad419
GS
-
Max
-
-
-
1.2
-
-
(V)
C
C
iss
rss
12
Unit
ns
ns
ns
ns
V
ns
nC
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