PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet - Page 6

MOSFET,N CH,30V,TO-220AB

PSMN3R4-30PL

Manufacturer Part Number
PSMN3R4-30PL
Description
MOSFET,N CH,30V,TO-220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN3R4-30PL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.4mohm
Rds(on) Test Voltage Vgs
10V
Transistor Case Style
TO-220AB
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN3R4-30PL
Manufacturer:
IR
Quantity:
20 000
NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN3R4-30PL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 November 2010
V
I
V
Conditions
I
I
see
I
see
I
see
V
V
V
see
V
see
V
see
V
see
V
see
f = 1 MHz
see
I
I
see
V
see
T
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 °C; see
Figure
Figure 11
Figure 11
Figure 12
Figure 13
Figure 12
Figure 12
Figure 13
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; see
= 12 V; V
= 16 V; V
= -16 V; V
= 10 V; I
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 10 V; I
DS
10; see
14; see
14; see
DS
DS
DS
DS
DS
D
D
D
D
D
= 0 V; V
GS
GS
DS
GS
GS
GS
DS
= 15 V; V
= 15 V; V
= 10 A; T
= 10 A; T
= 10 A; T
= V
= V
= V
= 10 A; T
= 10 A; T
Figure 16
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 15
Figure 15
; T
; T
; T
GS
N-channel 30 V 3.4 mΩ logic level MOSFET
14;
j
j
j
j
j
j
GS
GS
j
j
= 10 V
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 25 °C;
= 175 °C;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 4.5 V;
PSMN3R4-30PL
[1]
Min
30
27
1.3
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.3
-
10
10
-
3.5
-
-
2.8
1
64
58
31
12
6.2
5.8
8
2.8
3907
822
356
© NXP B.V. 2010. All rights reserved.
Max
-
-
2.15
-
2.45
5
100
100
100
6.46
4.1
6.1
7.79
3.4
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
6 of 15

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