VND7NV04-E STMicroelectronics, VND7NV04-E Datasheet - Page 13

• Manufacturer Part Number: VND7NV04-E
• Description: MOSFET N-CH 40V 6A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND7NV04-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 5V
• Operating Temperature Range: -55°C To +150°C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 9A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
3.1
Figure 9.
Figure 11. Static drain-source on resistance
Figure 13. Source-drain diode forward
Vsd (mV)
1000
950
900
850
800
750
700
650
600
550
500
Rds(on) (mOhm)
120
110
100
90
80
70
60
50
40
30
20
10
0
3
0
Electrical characteristics curves
Derating curve
vs input voltage (part 1/2)
characteristics
3.5
2
Vin=0V
4
4
4.5
6
Vin(V)
Id(A)
5
8
5.5
Id=3.5A
10
6
Tj= - 40ºC
Tj=150ºC
Tj=25ºC
6.5
12
Doc ID 7383 Rev 3
7
14
Figure 10. Transconductance
Figure 12. Static drain-source on resistance
Figure 14. Static drain source on resistance
Rds(on) (mohms)
150
125
100
Gfs (S)
20
18
16
14
12
10
75
50
25
Rds(on) (mOhm)
140
120
100
8
6
4
2
0
0
80
60
40
20
0
0
0
3
Tj=150ºC
Tj=25ºC
Tj=-40ºC
vs input voltage (part 2/2)
1
3.5
1
Vds=13V
Vin=5V
2
4
2
3
4.5
Id(A)
Id(A)
Vin(V)
4
3
5
Protection features
5
4
5.5
6
5
Tj=25ºC
Tj=150ºC
Tj=-40ºC
6
7
Tj=150ºC
Id=6A
Id=1A
Tj=-40ºC
Tj=25ºC
Id=6A
Id=1A
Id=6A
Id=1A
6.5
6
8
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