VND7NV04-E STMicroelectronics, VND7NV04-E Datasheet - Page 20

• Manufacturer Part Number: VND7NV04-E
• Description: MOSFET N-CH 40V 6A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND7NV04-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 5V
• Operating Temperature Range: -55°C To +150°C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 9A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package and PCB thermal data
4
4.1
Note:
20/37
Package and PCB thermal data
SO-8 thermal data
Figure 36. SO-8 PC board
Layout condition of R
thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.14 cm
Figure 37. R
thj-amb
RTHj_amb (ºC/W)
th
vs PCB copper area in open box free air condition
110
105
100
and Z
95
90
85
80
75
70
0
th
SO-8 at 2 pins connected to TAB
Doc ID 7383 Rev 3
measurements (PCB FR4 area=58 mm x 58 mm, PCB
0.5
PCB Cu heatsink area (cm^2)
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
1
1.5
2
2
, 0.8 cm
2.5
2
, 2 cm
2
).