VND7NV04-E STMicroelectronics, VND7NV04-E Datasheet - Page 18

• Manufacturer Part Number: VND7NV04-E
• Description: MOSFET N-CH 40V 6A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND7NV04-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 5V
• Operating Temperature Range: -55°C To +150°C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 9A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Protection features
3.3
18/37
DPAK maximum demagnetization energy
Figure 32. DPAK maximum turn-off current versus load inductance
Legend
A = Single Pulse at T
B = Repetitive pulse at T
C = Repetitive Pulse at T
Conditions:
V
Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Figure 33. DPAK demagnetization
I
LM AX (A)
CC
=13.5 V
V
IN
100
, I
10
L
1
0.01
Jstart
Jstart
Jstart
=150 °C
=100 °C
=125 °C
Demagnetization
L
=0 Ω. In case of repetitive pulses, T
0.1
Doc ID 7383 Rev 3
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
L (m H )
Demagnetization
1
jstart
10
(at beginning of each
Demagnetization
t
100