EPD-440-0/1.45 EPIGAP, EPD-440-0/1.45 Datasheet
EPD-440-0/1.45
Manufacturer Part Number
EPD-440-0/1.45
Description
DIODE, PHOTO, 440NM
Manufacturer
EPIGAP
Datasheet
1.EPD-440-01.45.pdf
(1 pages)
Specifications of EPD-440-0/1.45
Wavelength Typ
440nm
Half Angle
50°
Dark Current
10pA
Diode Case Style
TO-46
No. Of Pins
2
Operating Temperature Range
-40°C To +125°C
Active Area
1.2mm
Rise Time
0.05ns
Peak Wavelength
440nm
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GaP – UV-Photodiodes (190 - 570 nm)
Schottky barrier type
Description
Wide bandwidth and high spectral sensitivity in
the UV and visible range (190 nm - 570 nm), low
cost chip based on GaP, large active areas are
possible
Applications
Medical engineering (dermatology), output check
of UV - lamps and gas burner flame, measure-
ment and control of ecological parameters, ra-
diation control for a solarium, UV water purifica-
tion facilities
Features
Mounted in hermetically sealed TO-packages
with UV glass window, different active areas are
available
Chip sizes
Active area
Max. dark current at
V
V
Package
Spectral range at 0,01 maximum
Spectral bandwidth at 50%
Peak sensitivity wavelength
Typical responsivity at
Temperature coefficient of I
Typical rise and fall time at
V
Maximal reverse voltage at
I
Operating temperature range
Storage temperature range
R
ROITHNER LASERTECHNIK A-1040 Vienna, Austria, Schönbrunner Straße 7, Tel.: +43 1 586 52 43, office@roithner-laser.com
R
R
R
=100 µA
= 0.01V
= 1V
= -5V and 50
Parameter
load
p
D
times/K
Units
mm²
A/W
mm
nm
nm
nm
pA
ns
°C
°C
V
Symbol EPD-440-
min
TCI
T
T
V
S
A
I
amb
-
t
t
stg
D
r
f
p
R
0,5
ë
D
max
1E-3
0.9 x 0.9
0,01
0,1
TO-46
0/0.9
100 150
0.7
0.7
10
13
1
190 – 570 (with UV-glass)
200 250 300 350 400
EPD-440-
1.4 x 1.4
TO-46
0/1.4
1.2
0.8
20
30
2
-40 to +125
-40 to +125
Wavelength, nm
EPD-440-0
0.12
1.07
180
440
10
EPD-440-
2.5 x 2.5
TO-39
0/2.5
140
4.8
40
4
1
450 500 550
EPD-440-0
EPD-440-
3.6 x 3.6
TO-39
0/3.6
10.9
140
80
8
1
rev.06/01
600
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