SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4276DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.060
0.045
0.030
0.015
0.000
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0
0
I
D
= 6.8 A
On-Resistance vs. Drain Current
5
V
DS
V
0.5
DS
2
Output Characteristics
= 15 V
Q
g
- Drain-to-Source Voltage (V)
10
- Total Gate Charge (nC)
I
D
V
Gate Charge
- Drain Current (A)
DS
V
GS
= 7.5 V
= 4.5 V
V
1.0
15
4
DS
= 24 V
V
GS
V
20
GS
= 10 V thru 4 V
1.5
= 3 V
6
V
GS
25
= 10 V
2.0
30
8
500
400
300
200
100
1.7
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
0.6
6
V
V
DS
GS
Transfer Characteristics
0
T
C
J
oss
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
iss
Capacitance
25
1.2
12
50
V
T
C
GS
T
S10-1289-Rev. A, 31-May-10
C
= 125 °C
T
1.8
18
= 10 V; I
= - 55 °C
C
Document Number: 66599
75
= 25 °C
100
D
V
I
D
= 6.8 A
2.4
24
GS
= 6.1 A
= 4.5 V
125
150
3.0
30