FCA36N60NF Fairchild Semiconductor, FCA36N60NF Datasheet

MOSFET N-CH 600V 34.9A TO3PN

FCA36N60NF

Manufacturer Part Number
FCA36N60NF
Description
MOSFET N-CH 600V 34.9A TO3PN
Manufacturer
Fairchild Semiconductor
Series
SupreMOS®, FRFET®r
Datasheet

Specifications of FCA36N60NF

Input Capacitance (ciss) @ Vds
4245pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
34.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
112nC @ 10V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
80 mOhms
Forward Transconductance Gfs (max / Min)
39 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
34.9 A
Power Dissipation
312 W
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
86 nC
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCA36N60NF
N-Channel SupreMOS
600V, 36A, 95mΩ
Features
• R
• Ultra Low Gate Charge ( Typ. Qg = 86nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 80mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt Ruggedness
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
D
= 18A
T
®
C
TO-3PN
, FRFET
= 25
Parameter
Parameter
Continuous (T
Continuous (T
Pulsed
(T
Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
®
= 25
= 100
o
,MOSFET
C
1
o
Description
The SupreMOS
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS
switching performance and ruggedness.
This SupreMOS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
®
®
G
MOSFET, Fairchild’s next generation of high
MOSFET fits the industry’s AC-DC SMPS
®
FCA36N60NF
FCA36N60NF
provides world class Rsp, superior
-55 to +150
S
D
104.7
1800
34.9
3.12
600
±30
100
312
300
0.40
0.24
2.6
22
12
50
40
SupreMOS
March 2011
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm
®

Related parts for FCA36N60NF

FCA36N60NF Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. A ® ® , FRFET ,MOSFET Description = 18A The SupreMOS D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 12A 25Ω, Starting T = 25° ≤ 36A, di/dt ≤ 1200A/μs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCA36N60NF Rev unless otherwise noted C Package Reel Size TO-3PN - Test Conditions I = 1mA 0V,T ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 100000 10000 1000 100 *Notes 1MHz iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FCA36N60NF Rev. A Figure 2. Transfer Characteristics 200 100 10 μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 200 100 20V *Notes 0 108 Figure 6 ...

Page 4

... 150 Single Pulse 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 0.005 -5 10 FCA36N60NF Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 50 100 150 -100 Figure 10. Maximum Drain Current 40 μ μ 30 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCA36N60NF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCA36N60NF Rev DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FCA36N60NF Rev. A TO-3PN 7 www.fairchildsemi.com ...

Page 8

... FCA36N60NF Rev www.fairchildsemi.com ...

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