FCA36N60NF Fairchild Semiconductor, FCA36N60NF Datasheet - Page 6

• Manufacturer Part Number: FCA36N60NF
• Description: MOSFET N-CH 600V 34.9A TO3PN
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS®, FRFET®r

Specifications of FCA36N60NF

• Input Capacitance (ciss) @ Vds: 4245pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 34.9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 112nC @ 10V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 39 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 34.9 A
• Power Dissipation: 312 W
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 86 nC
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCA36N60NF Rev. A
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
as DUT
as DUT
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
6
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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