FCA36N60NF Fairchild Semiconductor, FCA36N60NF Datasheet - Page 3

• Manufacturer Part Number: FCA36N60NF
• Description: MOSFET N-CH 600V 34.9A TO3PN
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS®, FRFET®r

Specifications of FCA36N60NF

• Input Capacitance (ciss) @ Vds: 4245pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 34.9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 112nC @ 10V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 80 mOhms
• Forward Transconductance Gfs (max / Min): 39 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 34.9 A
• Power Dissipation: 312 W
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 86 nC
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCA36N60NF Rev. A
Typical Performance Characteristics
100000
10000
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
150
125
100
200
100
Figure 1. On-Region Characteristics
10
10
75
50
1
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Notes:
GS
1. V
2. f = 1MHz
=
GS
18
15.0 V
10.0 V
V
Drain Current and Gate Voltage
8.0 V
7.0 V
6.0 V
5.0 V
V
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
36
, Drain Current [A]
(
C ds = shorted
1
V
GS
54
= 10V
10
*Notes:
1. 250
2. T
)
*Notes: T
C
72
V
= 25
GS
μ
s Pulse Test
= 20V
o
100
C
C
C
C
90
C
= 25
rss
iss
10
oss
o
C
600
108
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
200
100
200
100
0.2
0.2
10
10
10
1
1
8
6
4
2
0
0.2
2
0
V
0.4
SD
Variation vs. Source Current
150
and Temperature
20
, Body Diode Forward Voltage [V]
150
V
Q
4
GS
o
C
g
o
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
0.6
V
DS
40
-55
= 120V
o
0.8
6
C
25
o
*Notes:
25
C
1. V
2. 250
60
o
V
C
*Notes:
1. V
2. 250
DS
1.0
*Notes: I
DS
GS
= 480V
μ
= 20V
s Pulse Test
μ
= 0V
8
s Pulse Test
V
80
DS
D
1.2
= 300V
= 18A
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100
10
1.4