MUN5312DW1T2G ON Semiconductor, MUN5312DW1T2G Datasheet - Page 15

• Manufacturer Part Number: MUN5312DW1T2G
• Description: Digital Transistors 100mA Complementary 50V NPN & PNP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5312DW1T2G

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 385mW
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G PNP TRANSISTOR
5
I
C
/I
B
V
R
Figure 49. Output Capacitance
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 47. V
, COLLECTOR CURRENT (mA)
15
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 51. Input Voltage versus Output Current
30
T
30
A
75°C
versus I
= −25°C
75°C
35
10
I
f = 1 MHz
I
T
C
E
40
A
25°C
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25°C
http://onsemi.com
45
20
50
50
15
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 50. Output Current versus Input Voltage
75°C
V
T
1
A
O
T
A
40
= −25°C
= 0.2 V
= −25°C
2
Figure 48. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
25°C
50
4
5
10
75°C
25°C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10