MUN5312DW1T2G ON Semiconductor, MUN5312DW1T2G Datasheet - Page 31

• Manufacturer Part Number: MUN5312DW1T2G
• Description: Digital Transistors 100mA Complementary 50V NPN & PNP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5312DW1T2G

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 385mW
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
5
4
3
2
1
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR
5
I
C
/I
V
B
Figure 125. Output Capacitance
R
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 123. V
C
15
, COLLECTOR CURRENT (mA)
20
20
25
100
0.1
10
CE(sat)
1
0
−25°C
30
30
75°C
Figure 127. Input Voltage versus Output
versus I
35
25°C
10
T
I
f = 1 MHz
I
T
A
C
E
40
A
, COLLECTOR CURRENT (mA)
= −25°C
75°C
= 0 V
40
C
= 25°C
25°C
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45
20
50
Current
50
31
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
V
Figure 126. Output Current versus Input
1
O
= 0.2 V
40
T
2
A
Figure 124. DC Current Gain
I
= −25°C
C
V
, COLLECTOR CURRENT (mA)
in
75°C
T
, INPUT VOLTAGE (VOLTS)
3
A
50
= −25°C
4
25°C
Voltage
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10