MUN5312DW1T2G ON Semiconductor, MUN5312DW1T2G Datasheet - Page 32

• Manufacturer Part Number: MUN5312DW1T2G
• Description: Digital Transistors 100mA Complementary 50V NPN & PNP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5312DW1T2G

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 385mW
• Mounting Type: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.8
0.6
0.4
0.2
1.4
1.2
0.01
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR
5
25°C
V
10
Figure 130. Output Capacitance
R
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 128. V
C
, COLLECTOR CURRENT (mA)
20
15
20
100
30
T
10
A
CE(sat)
1
25
= −25°C
0
30
25°C
Figure 132. Input Voltage versus Output
40
versus I
35
f = 1 MHz
I
T
5
E
I
A
C
75°C
= 0 V
, COLLECTOR CURRENT (mA)
I
= 25°C
50
C
C
40
/I
B
http://onsemi.com
= 10
45
T
10
A
60
Current
= −25°C
50
32
0.001
1000
0.01
15
100
100
0.1
10
10
1
0
1
75°C
V
O
1
Figure 131. Output Current versus Input
= 0.2 V
20
2
Figure 129. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
3
, INPUT VOLTAGE (VOLTS)
25
4
25°C
Voltage
5
10
75°C
6
T
A
75°C
7
= −25°C
T
A
= −25°C
8
V
CE
V
9
= 10 V
O
25°C
= 5 V
10
100
11