IHW40N60T Infineon Technologies, IHW40N60T Datasheet
IHW40N60T
Specifications of IHW40N60T
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IHW40N60T Summary of contents
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... V T Marking CE(sat),Tj=25°C j,max 1.55V H40T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax F I jmax < IHW40N60T G PG-TO-247-3 Package PG-TO-247-3 Value 600 120 120 303 -40...+175 j -55...+175 260 Rev. 2.3 Sep Unit ...
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... 175 =0.8mA 175 =20V =20V, I =40A =25V f=1MHz =40A =15V IHW40N60T q Max. Value Unit 0.49 K/W 0.76 40 Value Unit min. Typ. max. 600 - - V - 1.55 2. 1.05 - 4.1 4.9 5.7 µ 1000 - - 100 Ω - 2423 - pF - 113 - - 215 - Rev. 2.3 Sep. 08 ...
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... Energy losses include E “tail” and diode reverse recovery =175 C j Symbol Conditions 175 =40A 0nH , =30pF Energy losses include E “tail” and diode reverse recovery IHW40N60T q Value Unit min. Typ. max 186 - - 66 0. 0.92 - Value Unit min. Typ. max 196 - - 76 ...
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... Soft Switching Series 100A 10A 1A 10kHz 100kHz 1V V Figure 2. Safe operating area = 400V, CE 60A 40A 20A 0A 125°C 150°C 25°C Figure 4. Collector current as a function of 4 IHW40N60T t =1µs p 2µs 10µs 50µs DC 1ms 10ms 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 175 C ...
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... CE Power Semiconductors Soft Switching Series 100A 80A 60A 40A 20A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 8V 10V 0°C Figure 8. Typical collector-emitter 5 IHW40N60T V =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 50°C 100°C 150°C ...
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... Figure 10. Typical switching times 5.6Ω min 125°C 150°C 25°C Figure 12. Gate-emitter threshold voltage as = 400V, =5.6Ω IHW40N60T t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 40A Dynamic test circuit in Figure E) max. ...
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... Figure 14. Typical switching energy losses = 175°C, = 5.6Ω, G 1.5mJ 1.0mJ 0.5mJ 0.0mJ 300V Figure 16. Typical switching energy losses = 400V, = 5.6Ω IHW40N60T R , GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 40A Dynamic test circuit in Figure E) ...
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... K/W -2 8.74*10 -2 1.07*10 -4 7.49*10 -5 8.85*10 -6 7.39* K/W 10µs 10ms 100ms Figure 20. Diode transient thermal 8 IHW40N60T 10V 20V 30V 40V COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE D=0.5 0.2 0 0.151 1.26*10 0.223 9.7*10 0.05 0.273 1.4*10 0.111 1.51*10 0.02 R 0.01 1 single pulse ...
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... Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors Soft Switching Series =25°C 1.0V 175°C 0.5V 0.0V 1.0V 1.5V 25°C Figure 22. Typical diode forward voltage IHW40N60T I =40A F 20A 10A 50°C 75°C 100°C 125°C 150° JUNCTION TEMPERATURE J function of junction temperature Rev ...
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... IHW40N60T q Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.3 Sep. 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 11 IHW40N60T Rev. 2.3 Sep. 08 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 12 IHW40N60T q Rev. 2.3 Sep. 08 ...