IHW40N60T Infineon Technologies, IHW40N60T Datasheet - Page 4

IGBT Transistors LOW LOSS DuoPack 600V 40A

IHW40N60T

Manufacturer Part Number
IHW40N60T
Description
IGBT Transistors LOW LOSS DuoPack 600V 40A
Manufacturer
Infineon Technologies
Datasheet

Specifications of IHW40N60T

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
40 A
Power Dissipation
303 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
80 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
80.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IHW40N60T
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
140A
120A
100A
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
80A
60A
40A
20A
350W
300W
250W
200W
150W
100W
0A
50W
0W
10Hz
25°C
switching frequency for triangular
current (E
(T
V
case temperature
(T
100Hz
f,
50°C
GE
T
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
I
175 C, D = 0.5, V
175 C)
c
CASE TEMPERATURE
T
C
75°C
=80°C
T
1kHz
on
C
=110°C
= 0, hard turn-off)
100°C
G
= 5.6 )
10kHz
125°C
CE
= 400V,
100kHz
150°C
4
Soft Switching Series
Figure 2. Safe operating area
Figure 4. Collector current as a function of
100A
60A
40A
20A
10A
0A
1A
25°C
1V
V
CE
(D = 0, T
V
case temperature
(V
,
GE
COLLECTOR
T
GE
=15V)
C
,
10V
CASE TEMPERATURE
15V, T
75°C
C
= 25 C, T
-
IHW40N60T
EMITTER VOLTAGE
j
175 C)
100V
DC
Rev. 2.3 Sep. 08
j
125°C
175 C;
1000V
10ms
10µs
t
2µs
50µs
1ms
p
=1µs
q

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