IHW40N60T Infineon Technologies, IHW40N60T Datasheet - Page 3

• Manufacturer Part Number: IHW40N60T
• Description: IGBT Transistors LOW LOSS DuoPack 600V 40A
• Manufacturer: Infineon Technologies

Specifications of IHW40N60T

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 303 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 80.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
j
j
=25 C
=175 C
3
Soft Switching Series
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
j
j
C C
G E
C C
G E
G
G
= 25 C ,
= 175 C ,
1 )
1 )
1 )
1 )
= 5 . 6
= 5 . 6
= 40 0 V, I
= 0 /1 5 V,
= 40 0 V, I
= 0 /1 5 V,
=4 0nH ,
=4 0nH ,
=30pF
=30pF
Conditions
Conditions
,
C
C
=40A,
=40A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHW40N60T
Value
Value
Typ.
Typ.
66.3
0.92
0.92
76.5
186
196
1.4
1.4
Rev. 2.3 Sep. 08
-
-
-
-
-
-
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
Unit
ns
mJ
q