CY7C1356C-166BGC Cypress Semiconductor Corp, CY7C1356C-166BGC Datasheet - Page 11

• Manufacturer Part Number: CY7C1356C-166BGC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1356C-166BGC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Partial Write Cycle Description
The following table lists the Partial Write Cycle Description for CY7C1356C.
Document Number: 38-05538 Rev. *L
Read
Write – no bytes written
Write byte a − (DQ
Write byte b – (DQ
Write both bytes
Notes
10. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = L signifies at least one bytewrite select is active, BWx = valid signifies
11. Write is defined by WE and BWX. See Write Cycle Description table for details.
12. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
13. Table only lists a partial listing of the byte write combinations. Any combination of BW
that the desired byte write selects are asserted, see Write Cycle Description table for details.
a
b
and DQP
and DQP
Function (CY7C1356C)
a)
b)
X
is valid. Appropriate write will be done based on which byte write is active.
[10, 11, 12, 13]
WE
H
L
L
L
L
CY7C1354C, CY7C1356C
BW
H
H
x
L
L
b
BW
H
H
x
L
L
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a
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