CY7C1356C-166BGC Cypress Semiconductor Corp, CY7C1356C-166BGC Datasheet - Page 19

• Manufacturer Part Number: CY7C1356C-166BGC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1356C-166BGC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC to outputs in tri-state ....................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
Electrical Characteristics
Over the Operating Range
Document Number: 38-05538 Rev. *L
Commercial
Industrial
V
V
V
V
V
V
I
I
Notes
X
OZ
18. Overshoot: V
19. T
20. Tested initially and after any design or process changes that may affect these parameters.
Parameter
DD
DDQ
OH
OL
IH
IL
Range
Power-up
: Assumes a linear ramp from 0 V to V
–40 °C to +85 °C
IH
0 °C to +70 °C
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND ≤ V
Temperature
(AC) < V
Ambient
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +4.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[18, 19]
3.3 V – 5% /
[20]
+ 10%
V
DD
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O, I
for 2.5 V I/O, I
for 3.3 V I/O
for 2.5 V I/O
for 3.3 V I/O
for 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
DD
(min) within 200 ms. During this time V
DDQ
CYC
2.5 V – 5%
I
SS
DD
SS
DD
I
DD
≤ V
≤ V
to V
V
/2), undershoot: V
+ 0.5 V
+ 0.5 V
DDQ
DDQ
DDQ,
OH
OH
OL
OL
DD
= 8.0 mA
= 1.0 mA
= −4.0 mA
= −1.0 mA
DD
output disabled
Test Conditions
IL
(AC) > –2 V (Pulse width less than t
Neutron Soft Error Immunity
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
Application Note
of Terrestrial Failure
Parameter
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to
and V
AN 54908 “Accelerated Neutron SER Testing and Calculation
Description Test Condi-
Single event
single-bit
multi-bit
latch-up
Rates”.
DDQ
Logical
Logical
upsets
upsets
< V
CY7C1354C, CY7C1356C
DD
.
CYC
/2).
25 °C
25 °C
85 °C
tions
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
–
–
–
–
V
V
Typ Max* Unit
320
DD
DD
0
0
2.625
Max
V
3.6
0.4
0.4
0.8
0.7
30
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
5
DD
Page 19 of 32
0.01
368
0.1
Unit
μA
μA
μA
μA
μA
μA
FIT/
FIT/
FIT/
Dev
V
V
V
V
V
V
V
V
V
V
V
Mb
Mb
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