CY7C1470V33-167AXI Cypress Semiconductor Corp, CY7C1470V33-167AXI Datasheet - Page 21

• Manufacturer Part Number: CY7C1470V33-167AXI
• Description: CY7C1470V33-167AXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V33-167AXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Density: 72Mb
• Access Time (max): 3.4ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 167MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 21b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 450mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 2M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05289 Rev. *M
Note
I
I
I
I
I
C
C
C
C
C
18. Tested initially and after any design or process changes that may affect these parameters.
DD
SB1
SB2
SB3
SB4
Parameter
ADDRESS
DATA
CTRL
CLK
I/O
Parameters
Parameter
Θ
Θ
JC
JA
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
DD
Address input capacitance
Data input capacitance
Control input capacitance
Clock input capacitance
Input/output capacitance
[18]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
operating supply
Description
Description
[16, 17]
Description
[18]
(continued)
V
f = f
Max V
V
f
Max V
V
f = 0
Max V
V
f = f
Max V
V
f = 0
MAX
DD
IN
IN
IN
IN
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
≤ 0.3 V or V
≤ 0.3 V or V
MAX
≥ V
MAX
≥ V
= Max, I
= 1/t
DD
DD
DD
DD
IH
IH
= 1/t
= 1/t
, device deselected,
, device deselected,
, device deselected,
, device deselected,
CYC
or V
or V
Test Conditions
OUT
CYC
CYC
IN
IN
T
IN
IN
A
≤ V
≤ V
= 0 mA,
Test Conditions
> V
> V
= 25 °C, f = 1 MHz,
V
Test Conditions
V
IL
IL
DDQ
DDQ
DDQ
DD
, f =
,
= 3.3 V
= 2.5 V
− 0.3 V,
− 0.3 V,
4.0 ns cycle, 250 MHz
5.0 ns cycle, 200 MHz
6.0 ns cycle, 167 MHz
4.0 ns cycle, 250 MHz
5.0 ns cycle, 200 MHz
6.0 ns cycle, 167 MHz
All speed grades
4.0 ns cycle, 250 MHz
5.0 ns cycle, 200 MHz
6.0 ns cycle, 167 MHz
All speed grades
100 TQFP
Package
24.63
2.28
100 TQFP
Max
6
5
8
6
5
165 FBGA
Package
165 FBGA
16.3
2.1
Max
Min
6
5
8
6
5
–
–
–
–
–
–
–
–
–
–
–
CY7C1470V33
CY7C1472V33
CY7C1474V33
209 FBGA
209 FBGA
Package
15.2
1.7
Max
Max
500
500
450
245
245
245
120
245
245
245
135
6
5
8
6
5
Page 21 of 33
°C/W
°C/W
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
pF
pF
pF
pF
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