CY7C1470V33-167AXI Cypress Semiconductor Corp, CY7C1470V33-167AXI Datasheet - Page 24

• Manufacturer Part Number: CY7C1470V33-167AXI
• Description: CY7C1470V33-167AXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V33-167AXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Density: 72Mb
• Access Time (max): 3.4ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 167MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 21b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 450mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 2M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 38-05289 Rev. *M
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE
27. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1= Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
WRITE
D(A1)
A1
1
1
is LOW, CE
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
2
is HIGH and CE
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
Figure 7. Read/Write/Timing
t
3
DH
is LOW. When CE is HIGH, CE
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
UNDEFINED
is HIGH or CE
Q(A4+1)
BURST
READ
[25, 26, 27]
Q(A3)
6
t
DOH
t
OEHZ
2
WRITE
is LOW or CE
D(A5)
Q(A4)
A5
7
t
OEV
t
OELZ
3
Q(A6)
Q(A4+1)
READ
is HIGH.
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
CY7C1470V33
CY7C1472V33
CY7C1474V33
A7
DESELECT
Page 24 of 33
10
Q(A6)
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