CY7C199D-10ZXIT Cypress Semiconductor Corp, CY7C199D-10ZXIT Datasheet - Page 5

• Manufacturer Part Number: CY7C199D-10ZXIT
• Description: CY7C199D-10ZXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199D-10ZXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2014-2

Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Document Number: 38-05471 Rev. *H
C
C


Notes
Parameter
Parameter
2. Tested initially and after any design or process changes that may affect these parameters.
3. AC characteristics (except high Z) are tested using the load conditions shown in Figure (a). High Z characteristics are tested for all speeds using the test load shown
IN
OUT
JA
JC
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
in Figure (c).
OUTPUT
Input capacitance
Output capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
[2]
Description
Description
Z = 50 
(a)
[2]
1.5 V
50 
High Z characteristics:
T
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
A
= 25 C, f = 1 MHz, V
[3]
30 pF*
Test Conditions
JIG AND SCOPE
OUTPUT
INCLUDING
Test Conditions
CC
5V
= 5.0 V
5 pF
(c)
GND
3.0 V
R1 480
Rise Time:
10%
R2
255
59.16
40.84
SOJ
3 ns
ALL INPUT PULSES
90%
(b)
TSOP I
54.65
21.49
Max
Fall Time:
8
8
90%
3 ns
10%
CY7C199D
Page 5 of 15
C/W
C/W
Unit
Unit
pF
pF
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