CY7C199D-10ZXIT Cypress Semiconductor Corp, CY7C199D-10ZXIT Datasheet - Page 8

• Manufacturer Part Number: CY7C199D-10ZXIT
• Description: CY7C199D-10ZXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199D-10ZXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2014-2

Notes
Switching Waveforms
Document Number: 38-05471 Rev. *H
16. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a
17. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t
18. Data I/O is high impedance if OE = V
19. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
20. During this period the I/Os are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
DATA I/O
DATA IO
write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
WE
WE
CE
CE
NOTE
t
SA
20
IH
Figure 6. Write Cycle No. 3 WE Controlled, OE LOW
(continued)
.
t
Figure 5. Write Cycle No. 1: CE Controlled
HZWE
t
SA
t
t
AW
AW
t
t
WC
WC
DATA
DATA
t
SCE
HZWE
t
t
SD
SD
IN
IN
and t
VALID
VALID
SD
.
[16, 18, 19]
[17, 19]
t
HD
t
t
HA
LZWE
t
HA
t
HD
CY7C199D
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